Memory device including defective column addresses stored in ascending order

ABSTRACT

A memory device includes: a memory cell array; a first latch; a second latch; a first circuit; and a second circuit. The memory cell array includes first, second, and third columns associated with first, second, and third addresses, respectively. The first latch stores the first address and is associated with a fourth address. The second latch stores the second address and is associated with a fifth address. The fourth address and the fifth address are in an ascending order. The first circuit selects the third column in place of the first column based on the first address. The second circuit determines whether or not the first address and the second address are in an ascending order.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2021-127416, filed Aug. 3, 2021, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a memory device.

BACKGROUND

A NAND flash memory is known as a memory device capable of storing datain a non-volatile manner. A memory cell array in such a NAND flashmemory includes regular columns and redundancy columns. When there is adefective regular column, a redundancy column is used for data storageinstead of the defective regular column.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing an example of a configuration of aninformation processing system including a memory system according to anembodiment.

FIG. 2 is a block diagram showing an example of a configuration of amemory device included in the memory system according to the embodiment.

FIG. 3 is a circuit diagram showing an example of a circuitconfiguration of the memory cell array included in the memory deviceaccording to the embodiment.

FIG. 4 is a block diagram showing an example of a coupling relationshipbetween a sense amplifier module included in the memory device accordingto the embodiment and an input/output circuit, a register, and a memorycell array.

FIG. 5 is a block diagram showing an example of a configuration ofcolumns according to the embodiment.

FIG. 6 is a block diagram showing an example of a configuration of apart of the register according to the embodiment.

FIG. 7 is a flowchart showing an example of a write operation in thememory controller according to the embodiment.

FIG. 8 is a flowchart showing an example of a write operation in thememory device according to the embodiment.

FIG. 9 is a command sequence showing an example of a write operation inthe memory system according to the embodiment.

FIG. 10 is a command sequence showing an example of a write operation inthe memory system according to the embodiment.

FIG. 11 is a flowchart showing an example of a read operation in thememory controller according to the embodiment.

FIG. 12 is a flowchart showing an example of a read operation in thememory device according to the embodiment.

FIG. 13 is a command sequence showing an example of a read operation inthe memory system according to the embodiment.

FIG. 14 is a command sequence showing an example of a read operation inthe memory system according to the embodiment.

FIG. 15 is a timing chart showing an example of a CRD status updateoperation in the memory device according to the embodiment.

FIG. 16 is a timing chart showing an example of a CRD status updateoperation in the memory device according to the embodiment.

FIG. 17 is a block diagram showing an example of a configuration of apart of a register according to a modification.

DETAILED DESCRIPTION

In general, according to one embodiment, a memory device includes: amemory cell array; a first latch; a second latch; a first circuit; and asecond circuit. The memory cell array includes a first column associatedwith a first address, a second column associated with a second address,and a third column associated with a third address. The first latchstores the first address and is associated with a fourth address. Thesecond latch stores the second address and is associated with a fifthaddress. The fourth address and the fifth address are in an ascendingorder. The first circuit selects the third column in place of the firstcolumn based on the first address. The second circuit determines whetheror not the first address and the second address are in an ascendingorder.

Hereinafter, embodiments will be described with reference to thedrawings.

In the description that follows, components having approximately thesame function and configuration will be assigned a common referencenumeral. To particularly distinguish a plurality of components with asimilar configuration, such components may be referred to by anidentical reference numeral with different characters or numbers addedat the end.

1. Embodiment 1. 1. Configuration 1. 1. 1. Information Processing System

A configuration of an information processing system according to anembodiment will be described.

FIG. 1 is a block diagram showing an example of a configuration of aninformation processing system according to an embodiment. As shown inFIG. 1 , an information processing system 1 includes a host device 2 anda memory system 3.

The host device 2 is an information processing apparatus providedoutside the memory system 3. The host device 2 is, for example, apersonal computer or a server in a data center.

The memory system 3 is a storage device. The memory system 3 is, forexample, a memory card such as an SD™ card, a Universal Flash Storage(UFS), or a solid-state drive (SSD). The memory system 3 executes awrite operation, a read operation, or an erase operation of data inresponse to a request from the host device 2. The memory system 3 mayexecute a write operation, a read operation, and an erase operation asinternal processing that is irrelevant to a request from the host device2.

1. 1. 2. Memory System

An internal configuration of the memory system according to theembodiment will be described.

The memory system 3 includes a memory device 10 and a memory controller20.

The memory device 10 is, for example, a NAND flash memory. The memorydevice 10 stores data in a non-volatile manner.

The memory controller 20 is configured of an integral circuit such as asystem on a chip (SoC). The memory controller 20 controls the memorydevice 10 in response to a request from the host device 2. Specifically,for example, the memory controller 20 writes write data into the memorydevice 10 in response to a write request from the host device 2. Also,the memory controller 20 reads read data from the memory device 10 inresponse to a read request from the host device 2. The memory controller20 transmits the read data to the host device 2.

Next, an internal configuration of the memory controller 20 will bedescribed. The memory controller 20 includes a control circuit 21, abuffer memory 22, a host interface circuit 23 (host I/F), a memoryinterface circuit 24 (memory I/F), and an ECC circuit 25. A function ofthe memory controller 20 to be described below may be implemented eitheras a hardware configuration, or as a combined configuration of hardwareresources and firmware.

The control circuit 21 controls the entirety of the memory controller20. The control circuit 21 includes, for example, a processor such as acentral processing unit (CPU), and a read-only memory (ROM).

The buffer memory 22 is a memory for buffering data between the hostdevice 2 and the memory device 10. The buffer memory 22 is, for example,a static random access memory (SRAM). The buffer memory 22 temporarilystores write data and read data.

The host interface circuit 23 manages communications between the memorycontroller 20 and the host device 2. The host interface circuit 23 iscoupled to the host device 2 via a host bus. The host bus is, forexample, an SD™ interface, a Serial Attached SCSI (Small Computer SystemInterface) (SAS), a Serial Advanced Technology Attachment (SATA), or aPeripheral Component Interconnect Express (PCIe™).

The memory interface circuit 24 manages communications between thememory device 10 and the memory controller 20.

The memory interface circuit 24 is coupled to the memory device 10 via amemory bus BUS. The memory bus BUS is, for example, a bus compatiblewith a single data rate (SDR) interface, a toggle double data rate (DDR)interface, or an Open NAND Flash Interface (ONFI).

The ECC circuit 25 performs an error detection process and an errorcorrection process on data stored in the memory device 10. That is,during a data write operation, the ECC circuit 25 adds an errorcorrection code to write data. During a data read operation, the ECCcircuit 25 decodes read data, and detects whether or not an error bitexists. If an error bit is detected, the ECC circuit 25 specifies acolumn address (error position) of the error bit, and corrects theerror.

1. 1. 3. Memory Device

Hereinafter, an internal configuration of the memory device according tothe embodiment will be described. FIG. 2 is a block diagram showing anexample of a configuration of the memory device included in the memorysystem according to the embodiment.

The memory device 10 includes an input/output circuit 11, a logiccontroller 12, a register 13, a sequencer 14, a voltage generator 15, adriver set 16, a memory cell array 17, a row decoder 18, and a senseamplifier module 19.

The input/output circuit 11 and the logic controller 12 transmit andreceive various signals to and from the memory controller 20 via thememory bus BUS. The signals transmitted and received by the input/outputcircuit 11 include, for example, signals DQ<0>, DQ<1>, . . . , and DQ<7>(signals DQ<7:0>), and signals DQS and DQSn. The signals transmitted andreceived by the logic controller 12 include, for example, signals CEn,CLE, ALE, WEn, RE and REn, WPn, and RBn. Herein, “n” at the end of aname of a signal means that the signal is asserted when it is in a “Low(L)” level.

The signals DQ<7:0> are signals containing 8-bit data. The signalsDQ<7:0> are an entity of data DAT transmitted and received between thememory device 10 and the memory controller 20. Hereinafter, the signalsDQ<7:0> transmitted from the memory controller 20 to the memory device10 will be referred to as “input signals DQ<7:0>”. The signals DQ<7:0>transmitted from the memory device 10 to the memory controller 20 willbe referred to as “output signals DQ<7:0>”. The input signals DQ<7:0>include, for example, write data DAT, an address ADD, and a command CMD.The output signals DQ<7:0> include, for example, read data DAT and astatus STS.

The signals DQS and DQSn are strobe signals. The signal DQSn is aninversion signal of the signal DQS. The signal CEn is a signal forenabling the memory device 10.

The signals CLE and ALE are signals that notify the memory device 10that the input signals DQ<7:0> are a command CMD and an address ADD,respectively.

The signal WEn is a signal for causing the memory device 10 to fetch theinput signals DQ<7:0>.

The signals RE and REn are signals for causing the memory device 10 toread the output signals DQ<7:0>.

The signal WPn is a signal for instructing the memory device 10 toinhibit a write operation or an erase operation.

The signal RBn is a signal indicating whether the memory device 10 is ina ready state or a busy state. The ready state is a state in which thememory device 10 is capable of receiving an instruction from the memorycontroller 20. The busy state is a state in which the memory device 10cannot receive an instruction from the memory controller 20. The signalRBn shows that the “L” level is a busy state.

The input/output circuit 11 transmits the address ADD and command CMDand the write data DAT in the input signals DQ<7:0> to the register 13and the sense amplifier module 19, respectively. The input/outputcircuit 11 receives the status STS and the read data DAT in the outputsignals DQ<7:0> from the register 13 and the sense amplifier module 19,respectively.

The logic controller 12 receives, from the memory controller 20, thesignals CEn, CLE, ALE, WEn, RE and REn, and WPn. The logic controller 12transmits the signal RBn to the memory controller 20.

The register 13 stores the address ADD, the command CMD, and the statusSTS. The address ADD includes, for example, a column address, a blockaddress, and a page address.

The sequencer 14 controls the entire operation of the memory device 10based on the command CMD stored in the register 13.

The voltage generator 15 generates voltages used in a write operation, aread operation, an erase operation, etc.

The driver set 16 supplies the voltages generated by the voltagegenerator 15 to the memory cell array 17, the row decoder 18, and thesense amplifier module 19.

The memory cell array 17 includes a plurality of blocks BLK, a pluralityof bit lines, and a plurality of word lines. In the example of FIG. 2 ,a case is shown where the memory cell array 17 includes four blocksBLK0, BLK1, BLK2, and BLK3. The block BLK is, for example, a unit oferasure of data DAT in an erase operation. Each block BLK includes aplurality of memory cell transistors. Each memory cell transistor isassociated with a set of a bit line and a word line.

The row decoder 18 selects one of the blocks BLK0 to BLK3 based on ablock address in the register 13. The row decoder 18 further selects aword line in the selected block BLK based on a page address in theregister 13.

The sense amplifier module 19 selects a bit line based on a columnaddress in the register 13. In a data write operation, the senseamplifier module 19 transfers write data DAT to the memory cell array 17via the selected bit line. In a data read operation, the sense amplifiermodule 19 senses a threshold voltage of a memory cell transistor via theselected bit line. The sense amplifier module 19 generates read data DATbased on a result of the sensing.

1. 1. 4. Memory Cell Array

Next, a configuration of the memory cell array included in the memorydevice according to the embodiment will be described. FIG. 3 is acircuit diagram showing an example of a circuit configuration of thememory cell array included in the memory device according to theembodiment. In FIG. 3 , one of the blocks BLK included in the memorycell array 17 is shown. As shown in FIG. 3 , the block BLK includes, forexample, four string units SU0 to SU3.

Each string unit SU includes a plurality of NAND strings NS respectivelyassociated with bit lines BL<0> to BL<M> (where M is an integer equal toor greater than 2). Each NAND string NS includes, for example, memorycell transistors 0 to MT7 and select transistors ST1 and ST2. Eachmemory cell transistor MT includes a control gate and a charge storagelayer. Each memory cell transistor MT stores data in a non-volatilemanner. Each of the select transistors ST1 and ST2 is used for selectionof a string unit SU in various operations.

In each NAND string NS, the memory cell transistors MT0 to MT8 arecoupled in series. A drain of the select transistor ST1 is coupled to abit line BL associated therewith, and a source of the select transistorST1 is coupled to one end of a set of memory cell transistors MT0 to MT8coupled in series. A drain of the select transistor ST2 is coupled tothe other end of the set of memory cell transistors MT0 to MT7 coupledin series. A source of the select transistor ST2 is coupled to a sourceline SL.

Control gates of the memory cell transistors MT0 to MT7 in the sameblock BLK are respectively coupled to the word lines WL0 to WL7. Gatesof select transistors ST1 in the string units SU0 to SU4 arerespectively coupled to the select gate lines SGD0 to SGD4. Gates of theselect transistors ST2 are coupled to a select gate line SGS.

Different column addresses are assigned to the bit lines BL<0> to BL<M>.Each bit line BL is shared among a plurality of NAND strings NS to whichthe same column address is assigned in a plurality of blocks BLK. Eachof the word lines WL0 to WL7 is provided for each block BLK. The sourceline SL is, for example, shared among a plurality of blocks BLK. A setof memory cell transistors MT coupled to a common word line WL in eachstring unit SU is referred to as, for example, a “cell unit CU”. Thestorage capacity of a cell unit CU including memory cell transistors MTthat each stores, for example, 1-bit data is defined as “1-page data”.The cell unit CU may have a storage capacity of two or more pages ofdata according to the number of bits of data stored in the memory celltransistors MT.

A circuit configuration of the memory cell array 17 included in thememory device 10 according to the embodiment is not limited to theconfiguration described above. For example, the number of string unitsSU included in each block BLK may be designed to be a desired number.The number of memory cell transistors MT and the number of selecttransistors ST1 and ST2 included in each NAND string NS may be designedto be a desired number.

1. 1. 5. Sense Amplifier Module

Next, a configuration of the sense amplifier module included in thememory device according to the embodiment will be described. FIG. 4 is ablock diagram showing an example of a coupling relationship between thesense amplifier module included in the memory device according to theembodiment and the input/output circuit, the register, and the memorycell array. As shown in FIG. 4 , the sense amplifier module 19 includesa sense amplifier unit 19-1, a data latch 19-2, and a column selectioncircuit 19-3.

The sense amplifier unit 19-1 performs sensing of a threshold voltageand generation of read data DAT in a read operation. The sense amplifierunit 19-1 includes, for example, (M+1) sense amplifiers SA. The (M+1)sense amplifiers SA are classified into (m+1) sense amplifier groupsSA<7:0>, SA<15:8>, . . . , and SA<M:M−7>, each of which includes eightsense amplifiers SA (where m is, for example, an integer that satisfies(m+1)=(M+1)/8). In the example of FIG. 4 , a case is shown where m isequal to or greater than 2 (i.e., M is 23, 31, . . . ).

Eight sense amplifiers SA<0> to SA<7> in the sense amplifier groupSA<7:0> are respectively coupled to bit lines BL<0> to BL<7>. Eightsense amplifiers SA<8> to SA<15> in the sense amplifier group SA<15:8>are respectively coupled to bit lines BL<8> to BL<15>. Similarly, eightsense amplifiers SA<M−7> to SA<M> in the sense amplifier group SA<M:M−7>are respectively coupled to bit lines BL<M−7> to BL<M>.

The data latch 19-2 temporarily stores data DAT transmitted and receivedto and from the input/output circuit 11. The data latch 19-2 includes,for example, (M+1) data latches XDL. The (M+1) data latches XDL areclassified into (m+1) data latch groups XDL<7:0>, XDL<15:8>, . . . , andXDL<M:M−7>, each of which includes eight data latches XDL.

The data latch group XDL<7:0> is coupled to the sense amplifier groupSA<7:0> via a bus DBUS0. The data latch group XDL<15:8> is coupled tothe sense amplifier group SA<15:8> via a bus DBUS1. Similarly, the datalatch group XDL<M:M−7> is coupled to the sense amplifier group SA<M:M−7>via a bus DBUSm.

In the description that follows, a set of memory cell transistors MTcoupled to the bit lines <7:0>, the sense amplifiers SA<7:0>, and thedata latches XDL<7:0> will also be referred to as a “column C0”. A setof memory cell transistors MT coupled to the bit lines <15:8>, the senseamplifiers SA<15:8>, and the data latches XDL<15:8> will also bereferred to as a “column C1”. Similarly, a set of memory celltransistors MT coupled to the bit lines <M:M−8>, the sense amplifiersSA<M:M−8>, and the data latches XDL<M:M−8> will also be referred to as a“column Cm”. The columns C0, C1, . . . , and Cm are respectivelyassociated with column addresses CA0, CA1, . . . , and CAm.

The column selection circuit 19-3 selects a column. The column selectioncircuit 19-3 is coupled to the data latch groups XDL<7:0>, XDL<15:8>, .. . , and XDL<M:M−8> via buses XBUS<0>, XBUS<1>, . . . , and XBUS<m>,respectively. The column selection circuit 19-3 receives a columnaddress CAmod from the register 13. The column address CAmod uniquelyidentifies one of the column addresses CA0 to CAm.

In a write operation, the column selection circuit 19-3 receives, forexample, signals DQ<7:0> including write data DAT from the input/outputcircuit 11. The column selection circuit 19-3 transmits the write dataDAT to a column selected based on the column address CAmod.

In a read operation, the column selection circuit 19-3 receives, forexample, read data DAT from the column selected based on the columnaddress CAmod. The column selection circuit 19-3 transmits, to theinput/output circuit 11, the signals DQ<7:0> including the read dataDAT.

FIG. 5 is a block diagram showing an example of a configuration ofcolumns according to the embodiment. As shown in FIG. 5 , the columns C0to Cm are, for example, classified into regular columns C0 to Ck andredundancy columns C(k+1) to Cm (0<k<m). The regular columns C0 to Ckare columns that are used with a higher priority than the redundancycolumns. The redundancy columns C(k+1) to Cm are columns that are usedas alternatives to the regular columns C0 to Ck.

If the selection target column in the regular columns C0 to Ck isnormal, the register 13 transmits a column address (access address)corresponding to the selection target column to the column selectioncircuit 19-3 as a column address CAmod. On the other hand, if theselection target column in the regular columns C0 to Ck is defective,the register 13 transmits a column address corresponding to a column inthe redundancy columns C(k+1) to Cm to the column selection circuit 19-3as a column address CAmod. With the above-described configuration, it ispossible to execute a write operation and a read operation whileavoiding selection of a defective column.

1. 1. 6. Register

Next, a configuration of the register according to the embodiment willbe described. FIG. 6 is a block diagram showing an example of aconfiguration of a part of the register according to the embodiment. Asshown in FIG. 6 , the register 13 includes an address register 100 and astatus register 200. The address register 100 includes a register thatstores a column address 110 in an address ADD. The address register 100further includes a column redundancy (CRD) circuit 120 and an accessaddress correction circuit 130.

The CRD circuit 120 includes an access address counter 121, a CRDaddress counter 122, a CRD latch group 123, an address latch 124,comparison circuits 125 and 126, and a latch 127.

The access address counter 121 receives a column address CAini from thecolumn address 110. The access address counter 121 generates a columnaddress CAcnt based on the column address CAini. The column addressCAini is a column address that is to be the first selection target in awrite operation or a read operation. The column address CAcnt is acolumn address obtained by incrementing the column address CAini as aninitial value. The access address counter 121 transmits the columnaddress CAcnt to the comparison circuit 125.

The CRD address counter 122 receives a signal CMP1 from the comparisoncircuit 125. The signal CMP1 is a 1-bit signal. An H-level signal CMP1indicates that the column address CAcnt corresponds to a defectivecolumn. An L-level signal CMP1 indicates that the column address CAcntcorresponds to a regular column. Upon receiving the H-level signal CMP1,the CRD address counter 122 increments an address CRDcnt. The addressCRDcnt is an address that corresponds to one of a plurality of CRDlatches in the CRD latch group 123. The CRD address counter 122transmits the address CRDcnt to the CRD latch group 123.

The CRD latch group 123 includes N CRD latches 123<N:1> (where N is aninteger equal to or greater than 2). Each of the N CRD latches 123<N:1>stores a column address corresponding to a defective column. AddressesCRDcnt associated with the N CRD latches 123<N:1> are in an ascendingorder. That is, the address CRDcnt associated with the CRD latch123<J+1> is larger than the address CRDcnt associated with the CRD latch123<J>, where J is an integer smaller than N. For example, upon ahardware reset operation of the memory device 10, column addressescorresponding to defective columns are stored in the N CRD latches123<N:1> in an ascending order. That is, the column address of thedefective column stored in the CRD latch 123<J+1> is larger than thecolumn address of the defective column stored in the CRD latch 123<J>,where J is an integer smaller than N. There are cases where, the columnaddresses stored in the N CRD latches 123<N:1> after a hardware resetdeviate from an ascending order due to unintended data inversion, etc.

The CRD latch group 123 selects a CRD latch corresponding to the addressCRDcnt. When address CRDcnt=Y, for example, the CRD latch group 123transmits a column address stored in the CRD latch 123<Y> to the addresslatch 124 as a column address CAbad1 (1≤Y≤N). Also, when addressCRDcnt=Y, the CRD latch group 123 transmits a column address stored inthe CRD latch 123<Y+1> to a comparison circuit 126 as a column addressCAbad2.

The address latch 124 stores a single column address. Upon receiving thecolumn address CAbad1 from the CRD latch group 123, the address latch124 stores the column address CAbad1, and transmits it to the comparisoncircuits 125 and 126.

The comparison circuit 125 compares the column address CAcnt receivedfrom the access address counter 121 and the column address CAbad1received from the address latch 124. When the result of the comparisonis that the column address CAcnt matches the column address CAbad1, thecomparison circuit 125 generates an H-level signal CMP1. When the resultof the comparison is that the column address CAcnt does not match thecolumn address CAbad1, the comparison circuit 125 generates an L-levelsignal CMP1. The comparison circuit 125 transmits the signal CMP1 to theCRD address counter 122 and the access address correction circuit 130.

The comparison circuit 126 compares the column address CAbad1 receivedfrom the address latch 124 and the column address CAbad2 received fromthe CRD latch group 123. Based on the results of the comparison, thecomparison circuit 126 generates a signal CMP2. The signal CMP2 is a1-bit signal. Specifically, when the column address CAbad1 and thecolumn address CAbad2 deviate from an ascending order, the comparisoncircuit 126 generates an H-level signal CMP2. When the column addressCAbad1 and the column address CAbad2 are in an ascending order, thecomparison circuit 126 generates an L-level signal CMP2. That is, thesignal CMP2 is a signal for determining whether or not theabove-described storage rules for the column addresses in two CRDlatches with adjacent addresses are obeyed. The comparison circuit 126transmits the signal CMP2 to the latch 127.

The latch 127 stores 1-bit data. Upon receiving the signal CMP2 from thecomparison circuit 126, the latch 127 stores the signal CMP2 andtransmits it to the status register 200.

Based on the signal CMP1 received from the comparison circuit 125, theaccess address correction circuit 130 generates a column address CAmod.Specifically, when the signal CMP1 is at an L level, the access addresscorrection circuit 130 applies the column address CAcnt to the columnaddress CAmod. When the signal CMP1 is at an H level, the access addresscorrection circuit 130 applies a column address corresponding to one ofthe columns in the redundancy columns C(k+1) to Cm to the column addressCAmod. The access address correction circuit 130 transmits the generatedcolumn address CAmod to the column selection circuit 19-3.

The status register 200 includes a register that stores a CRD status210. The CRD status 210 is information that indicates whether or not thecolumn addresses stored in the CRD latch group 123 are, in the order ofthe CRD latches 123<1>, 123 <2>, . . . , 123<N>, in an ascending order.For example, upon receiving an H-level signal CMP2, the status register200 updates the CRD status 210 to a failed state. Upon receiving anL-level signal CMP2, the status register 200 maintains the state of theCRD status 210 (if it is in a passed state, the passed state ismaintained, and if it is in a failed state, the failed state ismaintained).

1. 2. Operation 1. 2. 1. Write Operation

A write operation in the memory system according to the embodiment willbe described.

(Flowchart)

First, a write operation in the memory controller according to theembodiment will be described with reference to the flowchart. FIG. 7 isa flowchart showing an example of a write operation in the memorycontroller according to the embodiment.

When conditions for a write operation are satisfied (START), the memorycontroller 20 transmits a write command to the memory device 10 (S10).The memory controller 20 also transmits an address ADD and write dataDAT. The conditions for a write operation include, for example, writedata DAT received from the host device 2 being stored in the buffermemory 22 by an amount equal to or greater than a predetermined amount.

After the processing at S10, the memory controller 20 waits until thesignal RBn shifts from a busy state to a ready state (S11).

When the signal RBn shifts to a ready state, the memory controller 20transmits a status read command to the memory device 10 (S12).

In response to the status read command, the memory controller 20receives a program status and a CRD status from the memory device 10(S13).

The program status is information indicating whether or not write dataDAT has been normally written into the memory cell array 17. When, forexample, the write data DAT has been normally written, the programstatus becomes a passed state. When the write data DAT has not beennormally written, the program status becomes a failed state.

The memory controller 20 determines whether or not the program statusreceived in the processing at S13 is a passed state (S14).

If the program status is a passed state (S14; yes), the write operationin the memory controller 20 ends (END).

If the program status is a failed state (S14; no), the memory controller20 determines whether or not the CRD status received in the processingat S13 is a passed state (S15).

If the CRD status is a passed state (S15; yes), the memory controller 20executes a retry operation of the write operation (S16). The retryoperation includes, for example, re-executing the processing from S10 toS14. In the retry operation, the memory controller 20 may specify anaddress ADD different from an address ADD in a write operation in whichthe program status has become a failed state. After the processing atS16, the write operation in the memory controller 20 ends (END).

If the CRD status is a failed state (S15; no), the memory controller 20executes a hardware reset operation of the memory device 10 (S17). Thehardware reset operation is, for example, equivalent to a power on/offoperation of the memory device 10, or a reactivation operation of thememory device 10. The hardware reset operation includes an operation ofstoring column addresses in the CRD latch group 123 in an ascendingorder.

After the processing at S17, the write operation in the memorycontroller 20 ends (END).

Next, a write operation in the memory device according to the embodimentwill be described. FIG. 8 is a flowchart showing an example of a writeoperation in the memory device according to the embodiment. FIG. 8 showsprocessing of the memory device 10 during the processing of S11 of thememory controller 20 shown in FIG. 7 .

Upon receiving write data DAT (START), the memory device 10 executes awrite data input operation and a CRD status update operation (S20). Thewrite data input operation is an operation of causing the data latch19-2 to store the write data DAT. The CRD status update operation is anoperation of updating the CRD status 210 based on a column address in anaccess range. The memory device 10 causes the status register 200 tostore the updated CRD status 210.

After the processing at S20, the memory device 10 shifts to a busy state(S21). That is, the memory device 10 transmits an L-level signal RBn tothe memory controller 20.

The memory device 10 determines whether or not the CRD status 210updated in the processing at S20 is a passed state (S22).

If the CRD status 210 is a passed state (S22; yes), the memory device 10executes a program sequence (S23). The program sequence is an operationof writing write data DAT stored in the data latch 19-2 in theprocessing at S20 into the memory cell array 17.

After the processing at S23, or if the CRD status 210 is a failed state(S22; no), the memory device 10 shifts to a ready state (S24). That is,the memory device 10 transmits an H-level signal RBn to the memorycontroller 20. In this manner, if the CRD status 210 is a failed state,the memory device 10 shifts to a ready state without performing aprogram sequence.

After the processing at S24 ends, the write operation in the memorydevice 10 ends (END).

(Command Sequences)

Next, a write operation in the memory controller according to theembodiment will be described with reference to command sequences. FIGS.9 and 10 are command sequences each showing an example of a writeoperation in the memory system according to the embodiment. FIG. 9 showsa case where the CRD status 210 is maintained at a passed state in awrite operation. FIG. 10 shows a case where the CRD status 210 isupdated from a passed state to a failed state in a write operation.

As shown in FIGS. 9 and 10 , the memory controller 20 transmits acommand “80h” to the memory device 10. The command “80h” is a commandthat instructs the memory device 10 to write data.

Subsequently, the memory controller 20 transmits an address ADD to thememory device 10 over, for example, five cycles. The address ADDincludes, for example, a column address CAini. The memory controller 20transmits write data DAT to the memory device 10.

Based on the column address CAini and the write data DAT, the memorydevice 10 executes a CRD status update operation along with a write datainput operation. In the example of FIG. 9 , the CRD status 210 ismaintained at the passed state. On the other hand, in the example ofFIG. 10 , the CRD status 210 is updated from the passed state to afailed state.

Subsequently, the memory controller 20 transmits a command “10h” to thememory device 10. The command “10h” is a command that instructsexecution of a program sequence to the memory device 10.

Upon receiving the command “10h”, the memory device 10 shifts the signalRBn from a ready state to a busy state. Prior to execution of theprogram sequence, the memory device 10 determines the state of the CRDstatus 210.

In the example of FIG. 9 , the CRD status 210 is a passed state.Accordingly, the memory device 10 executes the program sequence. Thus,the program status can be either a passed state or a failed state. Onthe other hand, in the example of FIG. 10 , the CRD status 210 is afailed state. Accordingly, the memory device 10 does not execute theprogram sequence. Thus, the program status becomes a failed state. Afterthe program sequence has ended, the memory device 10 shifts the signalRBn from a busy state to a ready state. A busy-state period t2 when theprogram sequence is not executed is shorter than a busy-state period t1when the program sequence is executed. For example, the period t2 is afew microseconds, whereas the period t1 is a few milliseconds.

Upon receiving the ready-state signal RBn, the memory controller 20transmits a command “70h” to the memory device 10. The command “70h” isa command that requests the memory device 10 to transmit a programstatus and a CRD status 210.

Upon receiving the command “70h”, the memory device 10 transmits theprogram status and the CRD status 210 to the memory controller 20. Inthe example of FIG. 9 , the memory controller 20 receives, in additionto a program status indicating a passed state or a failed state, a CRDstatus 210 indicating a passed state. If the program status indicates apassed state and the CRD status 210 indicates a passed state, the memorycontroller 20 recognizes that the column addresses corresponding to thedefective columns stored in the CRD latch group 123 are in an ascendingorder, and that the write data DAT has been normally written. If theprogram status indicates a failed state and the CRD status 210 indicatesa passed state, the memory controller 20 recognizes that the storagerules for the column addresses corresponding to the defective columns inthe CRD latch group 123 are obeyed, but that the write data DAT has notbeen normally written due to other factors. On the other hand, in theexample of FIG. 10 , the memory controller 20 receives a CRD status 210indicating a failed state, in addition to a program status indicating afailed state. This allows the memory controller 20 to recognize that thewrite operation has failed due to the column addresses corresponding tothe defective columns stored in the CRD latch group 123 not being in anascending order.

In the example of FIGS. 9 and 10 , a case has been described where theprogram status and the CRD status 210 are requested by the command“70h”; however, the configuration is not limited thereto. For example,the program status and the CRD status may be requested by differentcommands. A command that requests the CRD status may be a dedicatedcommand that is not used for purposes other than requesting the CRDstatus.

1. 2. 2. Read Operation

Next, a read operation in the memory system according to the embodimentwill be described.

(Flowchart)

A read operation in the memory controller according to the embodimentwill be described with reference to the flowchart. FIG. 11 is aflowchart showing an example of a read operation in the memorycontroller according to the embodiment.

When conditions for a read operation are satisfied (START), the memorycontroller 20 transmits a read command to the memory device 10 (S30).The memory controller 20 also transmits an address ADD. The conditionsfor a read operation include, for example, receiving a read request fromthe host device 2. The read operation conditions may include, forexample, determining that the memory controller 20 executes a readoperation as internal processing.

After the processing at S30, the memory controller 20 waits until thesignal RBn received from the memory device 10 shifts from a busy stateto a ready state (S31).

When the signal RBn shifts to the ready state, the memory controller 20toggles the signals RB and RBn, and receives read data DAT from thememory device 10 (S32).

The ECC circuit 25 of the memory controller 20 executes an errordetection process and an error correction process on the read data DATreceived in the processing at S32. The ECC circuit 25 determines whetheror not the error correction process has succeeded (S33).

If the error correction process has succeeded (S33; yes), the readoperation in the memory controller 20 ends (END). If the read operationis caused by a read request from the host device 2, the memorycontroller 20 transmits error-corrected read data DAT to the host device2.

If the error correction process has failed (S33; no), the memorycontroller 20 transmits a status read command to the memory device 10(S34).

In response to the status read command, the memory controller 20receives a CRD status from the memory device 10 (S35).

The memory controller 20 determines whether or not the CRD statusreceived in the processing at S35 is a passed state (S36).

If the CRD status is a passed state (S36; yes), the memory controller 20executes a retry operation of the read operation (S37). The retryoperation includes, for example, re-executing the processing from S30 toS33. In the retry operation, the ECC circuit 25 of the memory controller20 may apply a correction system different from the correction system inthe previously executed error correction process. After the processingat S37, the read operation in the memory controller 20 ends (END).

If the CRD status is a failed state (S36; no), the memory controller 20executes a hardware reset operation of the memory device 10 (S38). Afterthe processing at S38, the read operation in the memory controller 20ends (END).

Next, a read operation in the memory device according to the embodimentwill be described. FIG. 12 is a flowchart showing an example of a readoperation in the memory device according to the embodiment. FIG. 12shows processing of the memory device 10 during the processing of S31 ofthe memory controller 20 shown in FIG. 11 .

Upon receiving a read command (START), the memory device 10 shifts to abusy state (S40).

The memory device 10 executes a read data generation operation and a CRDstatus update operation (S41). The read data generation operation is anoperation of generating read data DAT based on a result of the sensingat the sense amplifier unit 19-1, and causes the data latch 19-2 tostore the read data DAT. The memory device 10 causes the status register200 to store the updated CRD status 210.

After the processing at S41, the memory device 10 shifts to a readystate (S42). That is, the memory device 10 transmits an H-level signalRBn to the memory controller 20.

The memory device 10 transmits the read data DAT stored in the datalatch 19-2 in the processing at S41 to the memory controller 20 (S43).

After the processing at S43 ends, the read operation in the memorydevice 10 ends (END).

(Command Sequences)

Next, a read operation in the memory controller according to theembodiment will be described with reference to command sequences. FIGS.13 and 14 are command sequences each showing an example of a readoperation in the memory system according to the embodiment. FIG. 13shows a case where an error correction process on read data DAT hassucceeded. FIG. 14 shows a case where an error correction process onread data DAT has failed.

As shown in FIGS. 13 and 14 , the memory controller 20 transmits acommand “00h” to the memory device 10. The command “00h” is a commandthat instructs reading of data from the memory device 10.

Subsequently, the memory controller 20 transmits an address ADD to thememory device 10 over, for example, five cycles. The address ADDincludes, for example, a column address CAini.

Subsequently, the memory controller 20 transmits a command “30h” to thememory device 10. The command “30h” is a command that instructs thememory device 10 to execute a read data generation operation.

Upon receiving the command “30h”, the memory device 10 shifts the signalRBn from a ready state to a busy state. Based on the column addressCAini, the memory device 10 executes a CRD status update operation aswell as a read data generation operation.

In the example of FIGS. 13 and 14 , a case where the CRD status 210 ismaintained at a passed state is shown by a solid line, and a case wherethe CRD status 210 is updated from the passed state to the failed stateis shown by a dashed-dotted line. After the read data generationoperation has ended, the memory device shifts the signal RBn from a busystate to a ready state. A busy-state period t3 does not changeregardless of whether or not the CRD status 210 is updated from a passedstate to a failed state.

Upon receiving a ready-state signal RBn, the memory controller 20toggles the signals RE and REn.

The memory device 10 generates signals DQS and DQSn based on the signalsRE and REn. The memory device 10 transmits read data DAT while togglingthe signals DQS and DQSn.

The ECC circuit 25 of the memory controller 20 executes an errorcorrection process on the received read data DAT. In the example of FIG.13 , the ECC circuit 25 succeeds in the error correction process.Accordingly, the read operation in the memory controller 20 ends. Thus,the CRD status 210 is not transmitted to the memory controller 20. Onthe other hand, in the example of FIG. 14 , the ECC circuit 25 fails inthe error correction process. Accordingly, it is determined that, in theread operation in the memory controller 20, either a retry operation ora hardware reset operation is to be executed. Thus, only in the exampleof FIG. 14 , the memory controller 20 transmits a command “70h” to thememory device 10.

Upon receiving the command “70h”, the memory device 10 transmits a CRDstatus 210 to the memory controller 20.

The memory controller 20 receives the CRD status 210 indicating either apassed state or a failed state. This allows the memory controller 20 todetermine whether or not failure of an error correction process is dueto the column addresses corresponding to the defective columns stored inthe CRD latch group 123 not being in an ascending order.

1. 2. 3. CRD Status Update Operation

Next, a CRD status update operation in the memory device according tothe embodiment will be described.

(When column addresses stored in a CRD latch group are in ascendingorder)

First, a case will be described where the defective column addressesstored in the CRD latch group 123 are in an ascending order. In thiscase, the CRD status 210 is maintained at a passed state.

FIG. 15 is a timing chart showing an example of a CRD status updateoperation in the memory device according to the embodiment. In theexample of FIG. 15 , column addresses are stored in an ascending orderin the CRD latch group 123. That is, in the example of FIG. 15 , it isassumed that column addresses “X+3”, “X+6”, “X+11”, and “X+20” arestored in the CRD latches 123<Y>, 123<Y+1>, 123<Y+2>, and 123<Y+3>,respectively. It is also assumed that a column address “Z” is stored inthe subsequent CRD latches 123<Y+4>, 123<Y+5>, 123<Y+6>, . . . “Z” is avalue further greater than “X+20”. “Z” is, for example, a maximum valuein an address space representing column addresses. In the example ofFIG. 15 , it is assumed that the column address CAcnt and the addressCRDcnt are incremented from “X” and “Y”, respectively.

While the address CRDcnt is “Y”, “X+3” is transmitted to the comparisoncircuit 125 as the column address CAbad1. Also, “X+3” and “X+6” aretransmitted to the comparison circuit 126 as the column addresses CAbad1and CAbad2, respectively.

While the column address CAcnt is from “X” to “X+2”, the comparisoncircuit 125 determines that the column addresses CAcnt and CAbad1 do notmatch. Accordingly, while the column address CAcnt is from “X” to “X+2”,the signal CMP1 is at an L level. Based on the L-level signal CMP1, theaccess address correction circuit 130 transmits the column address CAcntto the column selection circuit 19-3 as a column address CAmod. Thereby,when the column address CAcnt is from “X” to “X+2”, a regular column isselected.

If the column address CAcnt is incremented to reach “X+3”, thecomparison circuit 125 determines that the column addresses CAcnt andCAbad1 match. Accordingly, while the column address CAcnt is “X+3”, thesignal CMP1 is at an H level. Based on the H-level signal CMP1, theaccess address correction circuit 130 transmits, in place of the columnaddress CAcnt, a column address corresponding to a redundancy column tothe column selection circuit 19-3 as a column address CAmod. Thereby,when the column address CAcnt is “X+3”, a redundancy column is selected.

On the other hand, while the address CRDcnt is “Y”, the comparisoncircuit 126 determines that the column address CAbad1 and the columnaddress CAbad2 are in an ascending order. Accordingly, the signal CMP2is at an L level. Thereby, the CRD status 210 is maintained at a passedstate.

Based on the H-level signal CMP1, the CRD address counter 122 incrementsthe address CRDcnt to “Y+1” in accordance with the timing at which theaccess address counter 121 increments the column address CAcnt to reach“X+4”.

Subsequently, while the address CRDcnt is “Y+1”, “X+6” is transmitted tothe comparison circuit 125 as a column address CAbad1. Also, “X+6” and“X+11” are transmitted to the comparison circuit 126 as column addressesCAbad1 and CAbad2, respectively.

While the column address CAcnt is from “X+4” to “X+5”, the comparisoncircuit 125 determines that the column addresses CAcnt and CAbad1 do notmatch. Accordingly, while the column address CAcnt is from “X+4” to“X+5”, the signal CMP1 is at an L level. Based on the L-level signalCMP1, the access address correction circuit 130 transmits the columnaddress CAcnt to the column selection circuit 19-3 as a column addressCAmod. Thereby, when the column address CAcnt is from “X+4” to “X+5”, aregular column is selected.

If the column address CAcnt is incremented to reach “X+6”, thecomparison circuit 125 determines that the column addresses CAcnt andCAbad1 match. Accordingly, while the column address CAcnt is “X+6”, thesignal CMP1 is at an H level. Based on the H-level signal CMP1, theaccess address correction circuit 130 transmits, in place of the columnaddress CAcnt, a column address corresponding to a redundancy column tothe column selection circuit 19-3 as a column address CAmod. Thereby,when the column address CAcnt is “X+6”, a redundancy column is selected.

On the other hand, while the address CRDcnt is “Y+1”, the comparisoncircuit 126 determines that the column address CAbad1 and the columnaddress CAbad2 are in an ascending order. Accordingly, the signal CMP2is at an L level. Thereby, the CRD status 210 continues to be maintainedat a passed state.

Based on the H-level signal CMP1, the CRD address counter 122 incrementsthe address CRDcnt to reach “Y+2” in accordance with the timing at whichthe access address counter 121 increments the column address CAcnt toreach “X+7”.

If the address CRDcnt is incremented to reach “Y+3”, “X+20” istransmitted to the comparison circuit 125 as a column address CAbad1.Also, “X+20” and “Z” are transmitted to the comparison circuit 126 ascolumn addresses CAbad1 and CAbad2, respectively. In this case, too, thecomparison circuit 126 determines that the column address CAbad1 and thecolumn address CAbad2 are in an ascending order.

If the address CRDcnt is incremented to reach “Y+4”, “Z” is transmittedto the comparison circuit 125 as a column address CAbad1. Since thecolumn addresses CAcnt and CAbad1 do not match thereafter, the signalCMP1 output from the comparison circuit 125 is maintained at the Llevel.

Also, “Z” is transmitted to the comparison circuit 126 as columnaddresses CAbad1 and CAbad2. Upon recognizing that both of the columnaddresses CAbad1 and CAbad2 are “Z”, which is a maximum value in anaddress space representing column addresses, the comparison circuit 126stops the operation thereafter. Thereby, the signal CMP2 remains at theL level.

As described above, when the CRD status 210 is maintained at a passedstate, a regular column is selected if the regular column is normal, anda redundancy column is selected if the regular column is defective.

(When Column Addresses Stored in a CRD Latch Group are not in AscendingOrder)

Next, a case will be described where the defective column addressesstored in the CRD latch group 123 are not in an ascending order. In thiscase, the CRD status 210 is updated from a passed state to a failedstate.

FIG. 16 is a timing chart showing an example of a CRD status updateoperation in the memory device according to the embodiment. In theexample of FIG. 16 , there are positions in the CRD latch group 123where column addresses are not stored in an ascending order. That is, inthe example of FIG. 16 , it is assumed that column addresses “X+3”,“X+2”, and “X+11” are stored in the CRD latches 123<Y>, 123<Y+1>, and123<Y+2>. In the example of FIG. 16 , similarly to the example of FIG.15 , the column address CAcnt and the address CRDcnt are incremented,starting from “X” and “Y”, respectively.

While the address CRDcnt is “Y”, “X+3” is transmitted to the comparisoncircuit 125 as the column address CAbad1.

Also, “X+3” and “X+2” are transmitted to the comparison circuit 126 asthe column addresses CAbad1 and CAbad2, respectively.

The operation relating to the comparison circuit 125 while the columnaddress CAcnt is from “X” to “X+3” is similar to the case of FIG. 15 .That is, when the column address CAcnt is from “X” to “X+2”, a regularcolumn is selected. When the column address CAcnt is “X+3”, a redundancycolumn is selected. On the other hand, while the address CRDcnt is “Y”,the comparison circuit 126 determines that the column address CAbad1 andthe column address CAbad2 deviate from an ascending order. Accordingly,the signal CMP2 is at an H level. Thereby, the CRD status 210 is updatedto a failed state.

Based on the H-level signal CMP1, the CRD address counter 122 incrementsthe address CRDcnt to reach “Y+1” in accordance with the timing at whichthe access address counter 121 increments the column address CAcnt toreach “X+4”.

Subsequently, while the address CRDcnt is “Y+1”, “X+2” is transmitted tothe comparison circuit 125 as a column address CAbad1. Also, “X+2” and“X+11” are transmitted to the comparison circuit 126 as column addressesCAbad1 and CAbad2, respectively.

Since the column address CAcnt is equal to or greater than “X+4” whilethe address CRDcnt is “Y+1”, the column address CAcnt is always greaterthan the column address CAbad1. Thereby, the comparison circuit 125determines that the column addresses CAcnt and CAbad1 do not match.Accordingly, while the address CRDcnt is “Y+1”, the signal CMP1 is at anL level. Based on the L-level signal CMP1, the access address correctioncircuit 130 transmits the column address CAcnt to the column selectioncircuit 19-3 as a column address CAmod. Thereby, when the address CRDcntis “Y+1”, a regular column is selected regardless of whether or not theregular column is a defective column.

On the other hand, while the address CRDcnt is “Y+1”, the comparisoncircuit 126 determines that the column address CAbad1 and the columnaddress CAbad2 are in an ascending order. Accordingly, the signal CMP2is at an L level. However, since the CRD status 210 is already a failedstate, the failed state is maintained.

As described above, when the address CRDcnt is “Y+1”, the signal CMP1 ismaintained at the L level. Accordingly, no matter how much the columnaddress CAcnt is incremented, the address CRDcnt is not incremented andmaintained at “Y+1”.

Thus, when the CRD status 210 is updated to a failed state, a regularcolumn is selected without being replaced with a redundancy columnregardless of whether the regular column is normal or defective.

1. 3. Advantageous Effects of Embodiment

According to the embodiment, column addresses corresponding to defectivecolumns are respectively stored in N CRD latches 123<N:1>. Thecomparison circuit 126 determines whether or not a column address CAbad1stored in a CRD latch 123<Y> and a column address CAbad2 stored in a CRDlatch 123<Y+1> are in an ascending order. The determination result isstored as a CRD status 210. This allows the sequencer 14 to obtaininformation for suppressing defects of the memory device 10.

That is, in order to suppress an increase in circuit area, the number ofcolumn addresses that the comparison circuit 125 compares with thecolumn address CAcnt may be limited to one. On the other hand, thecolumn address CAcnt continues to be incremented, without beingdecremented. Accordingly, if the column address CAbad1 is not read in anascending order from the CRD latch group 123, a state will occur inwhich the column address CAcnt does not match the column address CAbad1no matter how much the column address CAcnt is incremented. Such a caseis not preferable, since the access address correction circuit 130cannot correct the column address CAmod from the column address CAcnt toa column address corresponding to a redundancy column.

According to the embodiment, the comparison circuit 126 determineswhether or not the column address CAbad1 is incremented in an ascendingorder. If it is determined, in the determination, that the columnaddress CAbad1 is incremented in an ascending order, the CRD status 210is maintained at a passed state. If the column address CAbad1 is notincremented in an ascending order, the CRD status 210 is updated to afailed state. This allows the sequencer 14 to determine whether or not aredundancy column has been selected in place of a defective regularcolumn, by referring to the CRD status 210.

Also, a CRD status update operation is performed every time a writeoperation or a read operation is performed. This allows the memorycontroller 20 to request the memory device 10 to transmit the CRD status210 every time a write operation or a read operation is performed.Accordingly, if the CRD status 210 is in a failed state, the memorycontroller 20 can reset column addresses stored in the CRD latch group123 in an ascending order by instructing a hardware reset operation tothe memory device 10. It is thus possible to suppress defects of thememory device 10.

The memory controller 20 requests the memory device 10 to transmit a CRDstatus 210 if an error correction process has failed during a readoperation. Thereby, processing can be omitted in the case wherereception of the CRD status 210 is unnecessary. Accordingly, theprocessing load on the memory controller 20 can be reduced.

If the CRD status 210 is a failed state, the sequencer 14 ends the writeoperation, without executing a program sequence. Thereby, it is possibleto reduce the possibility that data cannot be correctly read from thememory cell array 17 that occurs due to data being written into adefective regular column. Also, it is possible to reduce the processingload on the memory device 10.

2. Modification

The embodiment is not limited to the above-described examples, andvarious modifications are applicable.

In the above-described embodiment, a case has been described, as anexample, where a single CRD circuit 120 is provided; however, theconfiguration is not limited thereto. For example, a plurality of CRDcircuits 120 may be provided. In the description that follows, adescription of configurations and operations similar to those of theembodiment will be omitted, and a description will be given mainly ofconfigurations and operations different from those of the embodiment.

FIG. 17 is a block diagram showing an example of a configuration of apart of a register of a memory device according to a modification. FIG.17 corresponds to FIG. 6 of the embodiment. As shown in FIG. 17 , theaddress register 100 may include L CRD circuits 120_1, 120_2, . . . ,and 120_L (where L is an integer equal to or greater than 3).

The CRD circuits 120_1, 120_2, . . . , and 120_L respectively includeCRD latch groups 123_1, 123_2, . . . , and 123_L. The CRD latch group123_1 includes N CRD latches 123_1<N:1>. The CRD latch group 123_2includes N CRD latches 123_2<N:1>. Similarly, the CRD latch group 123_Lincludes N CRD latches 123_L<N:1>.

Addresses CRDcnt associated with the N CRD latches 123_1<N:1> are, inthe order of the CRD latch 123_1<1>, 123_1 <2>, . . . , and 123_1<N>, inan ascending order. Addresses CRDcnt associated with the N CRD latches123_2<N:1> are, in the order of the CRD latches 123_2<1>, 123_2 <2>, . .. , and 123_2<N>, in an ascending order. Similarly, addresses

CRDcnt associated with the N CRD latches 123_L<N:1> are, in the order ofthe CRD latches 123_L<1>, 123_L<2>, . . . , and 123_L<N>, in anascending order.

In the CRD latches 123_1<N:1>, 123_2<N:1>, . . . , and 123_L<N:1>,column addresses corresponding to defective columns are, in the order ofthe CRD latches 123_1<1>, 123_2 <1>, . . . , 123_L<1>, 123_1 <2>, 123_2<2>, . . . , 123_L<2>, . . . , 123_1<N>, 123_2<N>, . . . , and 123_L<N>,stored in an ascending order, in response to, for example, a hardwarereset operation of the memory device 10. Similarly to the embodiment,there are cases where the storage rules for the column addresses are notobeyed due to, for example, unintended data inversion, etc. after thehardware reset operation. Each of the CRD circuits 120_1, 120_2, . . . ,and 120_L includes an access address counter 121, a CRD address counter122, an address latch 124, comparison circuits 125 and 126, and a latch127 (not illustrated) with configurations similar to those shown in FIG.6 . Each of the CRD circuits 120_1, 120_2, . . . , and 120_L operatesbased on, for example, an address CAini common to the columns. The CRDcircuits 120_1, 120_2, . . . , and 120_L respectively transmit thesignals CMP1<1>, CMP1<2>, . . . , and CMP1<L> to the access addresscorrection circuit 130. The CRD circuits 120_1, 120_2, . . . , and 120_Lrespectively transmit the signals CMP2<1>, CMP2<2>, . . . , and CMP2<L>to the status register 200.

With the above-described configuration, the address register 100 iscapable of operating the L CRD circuits 120_1 to 120_L in parallel. Itis thereby possible to execute, in parallel, L replacement operations ofreplacing defective regular columns with redundancy columns. It is alsopossible to execute, in parallel, L CRD status update operations,together with the replacement operations. Accordingly, it is possible tocope with the cases where, for example, an end of a first replacementoperation is not in time for a start of a second replacement operation,and an end of a first CRD status update operation is not in time for astart of a second CRD status update operation. The above-described casesinclude, for example, a case where defective columns continuously exist.It is thus possible to cope with the speeding up of data, whilesuppressing defects of the memory device.

3. Others

In the above-described embodiment and its modification, a case has beendescribed where regular columns and redundancy columns aredistinguished; however, the configuration is not limited thereto. Forexample, regular columns and redundancy columns need not bedistinguished. Specifically, if a defective column exists, the defectivecolumn may be skipped.

In the above-described embodiment and its modification, a case has beendescribed where the memory device 10 transmits a CRD status 210 to thememory controller 20 in response to a status read command; however, theconfiguration is not limited thereto. The memory device 10 may beconfigured to transmit a CRD status 210 to the memory controller 20regardless of a status read command if the CRD status 210 is updated toa failed state.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

The invention claimed is:
 1. A memory device comprising: a memory cellarray including a first column associated with a first address, a secondcolumn associated with a second address, and a third column associatedwith a third address; a first latch which stores the first address andwhich is associated with a fourth address; a second latch which storesthe second address and which is associated with a fifth address, thefifth address being higher in address than the fourth address; a firstcircuit which selects the third column in place of the first columnbased on the first address; a second circuit which determines, in eachof a write operation and a read operation in which the third column isselected, whether or not the second address is higher in address thanthe first address; and a third circuit configured to end the writeoperation without storing data in the memory cell array when it isdetermined, in the determination by the second circuit in the writeoperation, that the second address is not higher in address than thefirst address.
 2. The memory device according to claim 1, wherein thethird circuit is configured to end the write operation after storingdata in the memory cell array when it is determined, in thedetermination by the second circuit in the write operation, that thesecond address is higher in address than the first address.
 3. Thememory device according to claim 1, wherein a duration of the writeoperation when it is determined, in the determination by the secondcircuit, that the second address is not higher in address than the firstaddress, is shorter than a duration of the write operation when it isdetermined, in the determination by the second circuit, that the secondaddress is higher in address than the first address.
 4. The memorydevice according to claim 1, wherein the third circuit is configured to,in the read operation, transmit data read from the memory cell array toa memory controller, regardless of whether or not the second address ishigher in address than the first address.
 5. The memory device accordingto claim 1, wherein the third circuit is configured to transmit a resultof the determination by the second circuit to a memory controller. 6.The memory device according to claim 5, wherein the third circuit isconfigured to transmit the result of the determination by the secondcircuit to the memory controller in response to a command from thememory controller.
 7. The memory device according to claim 1, wherein:the first column and the second column are defective columns, and thethird column is a regular column.
 8. The memory device according toclaim 1, wherein the third column is a redundancy column.
 9. The memorydevice according to claim 1, wherein: the memory cell array furthercomprises a fourth column associated with a sixth address, a fifthcolumn associated with a seventh address, and a sixth column associatedwith an eighth address, and the memory device further comprises: afourth latch which stores the sixth address and which is associated witha ninth address; a fifth latch which stores the seventh address andwhich is associated with a tenth address, the tenth address being higherin address than the ninth address; and a fourth circuit which determineswhether or not the seventh address is higher in address than the sixthaddress, and the first circuit is configured to further select the sixthcolumn in place of the fourth column based on the sixth address.
 10. Thememory device according to claim 9, wherein: the sixth address is higherin address than the first address, and the seventh address is higher inaddress than the second address.
 11. The memory device according toclaim 9, wherein the fourth circuit is configured to determine, in eachof a write operation and a read operation in which the sixth column isselected, whether or not the seventh address is higher in address thanthe sixth address.
 12. A memory device comprising: a memory cell arrayincluding a first column associated with a first address, a secondcolumn associated with a second address, a third column associated witha third address, a fourth column associated with a sixth address, afifth column associated with a seventh address, and a sixth columnassociated with an eighth address; a first latch which stores the firstaddress and which is associated with a fourth address; a second latchwhich stores the second address and which is associated with a fifthaddress, the fifth address being higher in address than the fourthaddress; a first circuit which selects the third column in place of thefirst column based on the first address; a second circuit whichdetermines whether or not the second address is higher in address thanthe first address; a fourth latch which stores the sixth address andwhich is associated with a ninth address; a fifth latch which stores theseventh address and which is associated with a tenth address, the tenthaddress being higher in address than the ninth address; and a fourthcircuit which determines whether or not the seventh address is higher inaddress than the sixth address, wherein: the first circuit is configuredto further select the sixth column in place of the fourth column basedon the sixth address, the fourth circuit is configured to determine, ineach of a write operation and a read operation in which the sixth columnis selected, whether or not the seventh address is higher in addressthan the sixth address, and the memory device further comprises a thirdcircuit configured to end the write operation without storing data inthe memory cell array when it is determined, in the determination by thesecond circuit and the fourth circuit in the write operation, that thesecond address is not higher in address than the first address or thatthe seventh address is not higher in address than the sixth address. 13.The memory device according to claim 12, wherein the third circuit isconfigured to end the write operation after storing data in the memorycell array when it is determined, in the determination by the secondcircuit and the fourth circuit in the write operation, that the secondaddress is higher in address than the first address, and that theseventh address is higher in address than the sixth address.
 14. Thememory device according to claim 12, wherein a duration of the writeoperation when it is determined, in the determination by the secondcircuit and the fourth circuit, that the second address is not higher inaddress than the first address or that the seventh address is not higherin address than the sixth address, is shorter than a duration of thewrite operation when it is determined, in the determination by thesecond circuit and the fourth circuit, that the second address is higherin address than the first address and that the seventh address is higherin order than the sixth address.
 15. The memory device according toclaim 12, wherein the third circuit is configured to, in the readoperation, transmit data read from the memory cell array to a memorycontroller, regardless of whether or not the second address is higher inaddress than the first address, and whether or not the seventh addressis higher in address than the sixth address.
 16. The memory deviceaccording to claim 12, wherein the third circuit is configured totransmit a result of the determination by the second circuit and thefourth circuit to a memory controller.
 17. The memory device accordingto claim 16, wherein the third circuit is configured to transmit theresult of the determination by the second circuit and the fourth circuitto the memory controller in response to a command from the memorycontroller.